elektronische bauelemente SSM01N60SL 1a , 600v , r ds(on) 8.1 n-ch enhancement mode power mosfet 01-apr-2014 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. sot - 223 rohs compliant product a suffix of -c specifies halogen free description the SSM01N60SL is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 1 a continuous drain current t c =100c i d 0.6 a pulsed drain current i dm 4 a t c =25c 22 w total power dissipation derate above 25c p d 0.18 w/c single pulse avalanche energy 1 e as 52 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 60 c / w maximum thermal resistance junction-case r jc 5.68 c / w notes: 1. l=30mh,i as =1.74a, v dd =110v, r g =25 , starting t j =25c 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 5.90 6.70 g - 0.18 b 6.70 7.30 h 2.00 ref. c 3.30 3.80 j 0.20 0.40 d 1.42 1.90 k 1.10 ref. e 4.45 4.75 l 2.30 ref. f 0.60 0.85 m 2.80 3.20 top view 1 2 3 4 a m b d l k f g h j e c
elektronische bauelemente SSM01N60SL 1a , 600v , r ds(on) 8.1 n-ch enhancement mode power mosfet 01-apr-2014 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 600 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v, v ds =0 drain-source leakage current i dss - - 1 a v ds =600v, v gs =0 static drain-source on-resistance r ds(on) - 6.8 8.1 v gs =10v, i d =0.5a total gate charge 1.2 q g - 3.37 - gate-source charge 1.2 q gs - 1.16 - gate-drain change 1.2 q gd - 1.04 - nc i d =1a v ds =480v v gs =10v turn-on delay time 1.2 t d(on) - 6.1 - rise time 1.2 t r - 11.9 - turn-off delay time 1.2 t d(off) - 8.3 - fall time 1.2 t f - 15.3 - ns v dd =300v i d =1a r g =25 input capacitance c iss - 139 - output capacitance c oss - 23.4 - reverse transfer capacitance c rss - 0.6 - pf v gs =0 v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.5 v i s =1a, v gs =0 continuous source current i s - - 1 a pulsed source current i sm - - 4 a integral reverse p-n junction diode in the mosfet reverse recovery time t rr - 190 - ns reverse recovery charge q rr - 0.53 - c i s =1a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente SSM01N60SL 1a , 600v , r ds(on) 8.1 n-ch enhancement mode power mosfet 01-apr-2014 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSM01N60SL 1a , 600v , r ds(on) 8.1 n-ch enhancement mode power mosfet 01-apr-2014 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSM01N60SL 1a , 600v , r ds(on) 8.1 n-ch enhancement mode power mosfet 01-apr-2014 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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